2019
2018
2017
Geetanjali Vashisht, S. Haldar, S. Porwal, R. Kumar, T. K. Sharma and V. K. Dixit, “InAsP/InP multiple quantum well based IR detectors with enhanced spectral photoresponse”, XIX Int. Workshop on The Physics of Semiconductor Devices, IIT Delhi, Dec. 11-15, 2017.
2016
V. K. Dixit, S. K. Khamari, S. Porwal, A. Chatterjee, G. Vashisht, S. Haldar, A. Khakha, V. Agnihotri, Ravi Kumar, T. K. Sharma, and K. S. Bindra, "Investigation into the complexities in active region of quantum well laser diode arrays," Kiran 27, 1 (2016). URL: https://www.researchgate.net/publication/314116065_Investigation_into_the_complexities_in_active_region_of_quantum_well_laser_diode_arrays
Ravi Kumar, V. K. Dixit, Tapas Ganguli, C. Mukherjee, A. K. Srivastava, and T. K. Sharma "Asymmetric Dislocation Distribution and Microstructure Analysis for GaP/GaAs", International Conference on New Scintillations on Materials Horizon (ICNSMH-2016), 21-23 October 2016, M.J.P. Rohilkhand University, Bareilly (U.P.), India.
2015
Abhishek Chatterjee, V. K. Agnihotri, S. Porwal, Ravi Kumar, T. Ganguli, S. M. Oak, and T. K. Sharma, “Structural and Optical Properties of GaN Epi-layers grown by Indigenously Developed Nitride MOVPE System” IWPSD, IISc Bangalore, 7-10 Dec. 2015.
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2018
2017
Geetanjali Vashisht, S. Haldar, S. Porwal, R. Kumar, T. K. Sharma and V. K. Dixit, “InAsP/InP multiple quantum well based IR detectors with enhanced spectral photoresponse”, XIX Int. Workshop on The Physics of Semiconductor Devices, IIT Delhi, Dec. 11-15, 2017.
2016
V. K. Dixit, S. K. Khamari, S. Porwal, A. Chatterjee, G. Vashisht, S. Haldar, A. Khakha, V. Agnihotri, Ravi Kumar, T. K. Sharma, and K. S. Bindra, "Investigation into the complexities in active region of quantum well laser diode arrays," Kiran 27, 1 (2016). URL: https://www.researchgate.net/publication/314116065_Investigation_into_the_complexities_in_active_region_of_quantum_well_laser_diode_arrays
Ravi Kumar, V. K. Dixit, Tapas Ganguli, C. Mukherjee, A. K. Srivastava, and T. K. Sharma "Asymmetric Dislocation Distribution and Microstructure Analysis for GaP/GaAs", International Conference on New Scintillations on Materials Horizon (ICNSMH-2016), 21-23 October 2016, M.J.P. Rohilkhand University, Bareilly (U.P.), India.
Abhishek Chatterjee, V. K. Agnihotri, S. Porwal, Ravi Kumar, T. Ganguli, S. M. Oak, and T. K. Sharma, “Structural and Optical Properties of GaN Epi-layers grown by Indigenously Developed Nitride MOVPE System” IWPSD, IISc Bangalore, 7-10 Dec. 2015.
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